2007. 10. 31 1/3 semiconductor technical data KDS127E silicon epitaxial planar diode revision no : 0 ultra high speed switching application. features low forward voltage fast reverse recovery time small total capacitance ultra- small surface mount package maximum rating (ta=25 ) dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. d1 anode 2. d2 cathode 3. d3/d4 anode/cathode 4. d3 anode 5. d4 cathode 6. d1/d2 anode/cathode electrical characteristics (ta=25 ) type name 123 6 5 4 u s marking characteristic symbol rating unit maximum (peak) reverse voltage v rm 80 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 * ma average forward current i o 100 * ma surge current (10ms) i fsm 2 * a power dissipation p d 200** mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =100ma - - 1.2 v reverse current i r v r =80v - - 0.1 a total capacitance c t v r =6v, f=1mhz - - 3.5 pf 12 3 6 5 4 d1 d2 d4 d3 equivalent circuit (top view) * where d1, d2, d3, d4 are used independently or simultaneously, the maximum ratings per diode are 50% of those of the single diode. ** total rating
2007. 10. 31 2/3 KDS127E revision no : 0 forward current i f (ma) forward voltage v f (v) i f - v f i r - v r reverse voltage v r (v) reverse current i r (na) reverse voltage v r (v) c t - v r total capacitance c t (pf) f=1mhz 0 0.1 0.4 0.6 0.2 0.8 1.0 1.2 0.001 0.01 1 10 100 0.1 1 10 ta=25 c ta=25 c 0 0.1 20 30 10 40 50 60 70 80 01015 5 202530 40 35 45 0.001 0.01 1 ta=25 c forward current i f (ma) forward voltage v f (v) i f - v f i r - v r reverse voltage v r (v) reverse current i r (na) reverse voltage v r (v) c t - v r total capacitance c t (pf) f=1mhz 0 0.1 0.4 0.6 0.2 0.8 1.0 1.2 0.001 0.01 1 10 100 0.1 1 10 ta=25 c ta=25 c 0 0.1 20 30 10 40 50 60 70 80 01015 5 202530 40 35 45 0.001 0.01 1 ta=25 c d1, d3 d2, d4 d1, d3 d2, d4 d1, d3 d2, d4
2007. 10. 31 3/3 KDS127E revision no : 0 0 power dissipation p (mw) -40 p - ta 25 50 75 100 125 150 40 80 120 160 200 240 ambient temperature ta ( c)
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